GeneSiC Semiconductor Single Diodes

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Series
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Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
36 710
In Stock
1 : 1,41000 €
Cut Tape (CT)
3 000 : 0,87234 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1200V 2A DO214AA
GeneSiC Semiconductor
22 502
In Stock
1 : 2,76000 €
Cut Tape (CT)
3 000 : 1,85697 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
GE12MPS06E
GD10MPS12E
DIODE SIL CARB 1200V 29A TO2522
GeneSiC Semiconductor
103
In Stock
1 : 3,09000 €
Cut Tape (CT)
2 500 : 1,99516 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-247-2
GD05MPS17H
DIODE SIL CARB 1700V 15A TO2472
GeneSiC Semiconductor
923
In Stock
1 : 4,57000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N1200A
1N1200A
DIODE STANDARD 100V 12A DO4
GeneSiC Semiconductor
1 594
In Stock
1 : 5,47000 €
Bulk
-
Bulk
Active
Standard
100 V
12A
1.1 V @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
TO-263-8
GC05MPS33J
DIODE SIL CARB 3300V 5A TO2637
GeneSiC Semiconductor
2 378
In Stock
1 : 20,72000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
5A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
175°C
TO-263-8
GB05MPS33-263
DIODE SIL CARB 3300V 14A TO2637
GeneSiC Semiconductor
113
In Stock
1 : 26,17000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
14A
3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 3000 V
288pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
TO-247-2
GD60MPS17H
DIODE SIL CARB 1700V 122A TO2472
GeneSiC Semiconductor
345
In Stock
1 : 39,80000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
122A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 1700 V
4577pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GE12MPS06E
GD02MPS12E
DIODE SIL CARB 1200V 8A TO2522
GeneSiC Semiconductor
1 280
In Stock
1 : 1,25000 €
Cut Tape (CT)
2 500 : 0,76006 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
8A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
73pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GE12MPS06E
GE04MPS06E-TR
DIODE SIL CARB 650V 12A TO2522
GeneSiC Semiconductor
801
In Stock
1 : 1,74000 €
Cut Tape (CT)
2 500 : 0,89099 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
12A
1.35 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 650 V
186pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GE12MPS06E
GE10MPS06E-TR
DIODE SIL CARB 650V 26A TO2522
GeneSiC Semiconductor
1 288
In Stock
1 : 2,95000 €
Cut Tape (CT)
2 500 : 1,58314 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
26A
1.35 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 650 V
466pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1200V 25A TO220
GeneSiC Semiconductor
2 889
In Stock
1 : 3,36000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-247-2
GD30MPS06H
DIODE SIL CARB 650V 49A TO247-2
GeneSiC Semiconductor
210
In Stock
1 : 5,10000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
49A
-
No Recovery Time > 500mA (Io)
0 ns
-
735pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD20MPS12H
DIODE SIL CARB 1200V 39A TO2472
GeneSiC Semiconductor
2 011
In Stock
1 : 6,18000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
39A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD30MPS12H
DIODE SIL CARB 1200V 55A TO2472
GeneSiC Semiconductor
670
In Stock
1 : 8,53000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
55A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
20 µA @ 1200 V
1101pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
1N1190A
1N1190A
DIODE STANDARD 600V 40A DO5
GeneSiC Semiconductor
446
In Stock
1 : 8,91000 €
Bulk
-
Bulk
Active
Standard
600 V
40A
1.1 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
1N1186A
1N1186A
DIODE STANDARD 200V 40A DO5
GeneSiC Semiconductor
181
In Stock
1 : 8,91000 €
Bulk
-
Bulk
Active
Standard
200 V
40A
1.1 V @ 40 A
-
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
1N1190AR
1N1190AR
DIODE STANDARD REV 600V 40A DO5
GeneSiC Semiconductor
181
In Stock
1 : 8,91000 €
Bulk
-
Bulk
Active
Standard, Reverse Polarity
600 V
40A
1.1 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
TO-247-2
GD60MPS06H
DIODE SIL CARB 650V 82A TO247-2
GeneSiC Semiconductor
489
In Stock
1 : 8,92000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
82A
1.8 V @ 60 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
1463pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-263-8
GD30MPS12J-TR
DIODE SIL CARB 1200V 59A TO2637
GeneSiC Semiconductor
1 474
In Stock
1 : 8,96000 €
Cut Tape (CT)
800 : 6,74550 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
59A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1200 V
1101pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
TO-247-2
GD50MPS12H
DIODE SIL CARB 1200V 92A TO2472
GeneSiC Semiconductor
383
In Stock
1 : 13,62000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
92A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 1200 V
1835pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD25MPS17H
DIODE SIL CARB 1700V 56A TO2472
GeneSiC Semiconductor
1 192
In Stock
1 : 15,56000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
56A
1.8 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1083pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD10MPS12H
DIODE SIL CARB 1200V 10A TO2472
GeneSiC Semiconductor
485
In Stock
1 : 4,07000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247-2
175°C
TO-220-2
GD30MPS06A
DIODE SIL CARB 650V 30A TO220-2
GeneSiC Semiconductor
1 334
In Stock
1 : 4,40000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
30A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-220-2
TO-220-2
175°C
TO-220-2
GD20MPS12A
DIODE SIL CARB 1200V 42A TO220
GeneSiC Semiconductor
2 234
In Stock
1 : 5,51000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
42A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
737pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
Showing
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.