SiC (Silicon Carbide) Schottky Single Diodes

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Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-214AA, SMB
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GeneSiC Semiconductor
4 234
In Stock
1 : 1,40000 €
Cut Tape (CT)
3 000 : 0,86790 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
1A
2 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 6.5 V
76pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
IDH20G65C6XKSA1
IDH04G65C6XKSA1
DIODE SIL CARB 650V 12A PGTO220
Infineon Technologies
7 115
In Stock
1 : 2,00000 €
Tube
-
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SiC (Silicon Carbide) Schottky
650 V
12A
1.35 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 420 V
205pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
CSD01060E-TR
CSD01060E-TR
DIODE SIL CARB 600V 4A TO252-2
Wolfspeed, Inc.
619
In Stock
1 : 2,03000 €
Cut Tape (CT)
2 500 : 0,57817 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
600 V
4A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
80pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
IDM02G120C5XTMA1
DIODE SIL CARB 1200V 2A PGTO2522
Infineon Technologies
36 657
In Stock
1 : 2,16000 €
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2 500 : 0,63637 €
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Tape & Reel (TR)
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Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
2A
1.65 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1200 V
182pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-2
-55°C ~ 175°C
DO-214AA, SMB
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GeneSiC Semiconductor
44 817
In Stock
1 : 2,21000 €
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3 000 : 1,44362 €
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Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
1200 V
2.5A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
69pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C3D04060E-TR
DIODE SIL CARB 600V 13.5A TO252
Wolfspeed, Inc.
2 298
In Stock
1 : 2,48000 €
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2 500 : 0,69775 €
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Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
600 V
13.5A
1.8 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 600 V
251pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
C3D04060A
DIODE SIL CARB 600V 13.5A TO220
Wolfspeed, Inc.
4 216
In Stock
1 : 2,52000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
13.5A
1.8 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
251pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D02120E-TR
DIODE SIL CARB 1200V 10A TO2522
Wolfspeed, Inc.
4 627
In Stock
1 : 2,68000 €
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2 500 : 0,81084 €
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Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-252-3, DPAK (2 Leads + Tab), SC-63
C4D02120E
DIODE SIL CARB 1200V 10A TO2522
Wolfspeed, Inc.
187
In Stock
1 : 2,72000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
167pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
DPAK
STPSC2H12B2Y-TR
DIODE SIL CARBIDE 1200V 5A DPAK
STMicroelectronics
14 991
In Stock
1 : 2,73000 €
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2 500 : 0,91025 €
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-
Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
1200 V
5A
1.5 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
12 µA @ 1200 V
190pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
DO-214AA, SMB
GB02SLT12-214
DIODE SIL CARB 1200V 2A DO214AA
GeneSiC Semiconductor
25 835
In Stock
1 : 2,75000 €
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3 000 : 1,84751 €
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Tape & Reel (TR)
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SiC (Silicon Carbide) Schottky
1200 V
2A
1.8 V @ 1 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 1200 V
131pF @ 1V, 1MHz
-
-
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 175°C
UJ3D06508TS
UJ3D1202TS
DIODE SIL CARBIDE 1200V 2A TO220
onsemi
6 604
In Stock
1 : 2,90000 €
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SiC (Silicon Carbide) Schottky
1200 V
2A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
22 µA @ 1200 V
109pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DPAK
STPSC10H065B-TR
DIODE SIL CARBIDE 650V 10A DPAK
STMicroelectronics
186
In Stock
1 : 2,96000 €
Cut Tape (CT)
2 500 : 1,28505 €
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-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
650 V
10A
1.75 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
GE12MPS06E
GD10MPS12E
DIODE SIL CARB 1200V 29A TO2522
GeneSiC Semiconductor
5 800
In Stock
1 : 3,08000 €
Cut Tape (CT)
2 500 : 1,98500 €
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Tape & Reel (TR)
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Digi-Reel®
Active
SiC (Silicon Carbide) Schottky
1200 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
TO-220-2
GD10MPS12A
DIODE SIL CARB 1200V 25A TO220
GeneSiC Semiconductor
1 290
In Stock
1 : 3,34000 €
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Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
25A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
367pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-220-2
C3D06060A
DIODE SIL CARB 600V 19A TO220-2
Wolfspeed, Inc.
631
In Stock
1 : 3,35000 €
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
19A
1.8 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-263-8
GD05MPS17J-TR
DIODE SIL CARB 1700V 15A TO2637
GeneSiC Semiconductor
1 770
In Stock
1 : 4,55000 €
Cut Tape (CT)
800 : 3,32550 €
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-
Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
TO-247-2
GD05MPS17H
DIODE SIL CARB 1700V 15A TO2472
GeneSiC Semiconductor
1 580
In Stock
1 : 4,55000 €
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Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
D2PAK
STPSC10H12G-TR
DIODE SIL CARB 1200V 10A D2PAK
STMicroelectronics
846
In Stock
1 : 4,61000 €
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1 000 : 2,21185 €
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Tape & Reel (TR)
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Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
725pF @ 0V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
TO-220-2
IDH10G120C5XKSA1
DIODE SIC 1.2KV 10A PGTO2201
Infineon Technologies
224
In Stock
1 : 4,62000 €
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Tube
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SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
62 µA @ 1200 V
525pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
TO-220-2
C3D10060A
DIODE SIL CARB 600V 30A TO220-2
Wolfspeed, Inc.
1 767
In Stock
1 : 4,88000 €
Tube
Tube
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SiC (Silicon Carbide) Schottky
600 V
30A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
C3D06060G
C3D10060G
DIODE SIL CARB 600V 29A TO263-2
Wolfspeed, Inc.
1 048
In Stock
1 : 4,88000 €
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SiC (Silicon Carbide) Schottky
600 V
29A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
C2D05120E
C3D10065E
DIODE SIL CARB 650V 32A TO252-2
Wolfspeed, Inc.
3 796
In Stock
1 : 5,04000 €
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SiC (Silicon Carbide) Schottky
650 V
32A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
460.5pF @ 0V, 1MHz
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
Wolfspeed_package_QFN
C6D10065Q-TR
DIODE SIL CARBIDE 650V 39A 4QFN
Wolfspeed, Inc.
976
In Stock
1 : 5,04000 €
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2 500 : 1,72439 €
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SiC (Silicon Carbide) Schottky
650 V
39A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
-
50 µA @ 650 V
611pF @ 0V, 1MHz
-
-
Surface Mount
4-PowerVQFN
4-QFN (8x8)
-55°C ~ 175°C
IDH20G65C6XKSA1
IDH16G65C6XKSA1
DIODE SIL CARB 650V 34A PGTO220
Infineon Technologies
4 368
In Stock
1 : 5,07000 €
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SiC (Silicon Carbide) Schottky
650 V
34A
1.35 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
53 µA @ 420 V
783pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
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Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.