Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
MOSFET N-CH 30V 1.2A SOT23
Infineon Technologies
18 583
In Stock
1 : 0,36000 €
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3 000 : 0,07739 €
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N-Channel
MOSFET (Metal Oxide)
30 V
1.2A (Ta)
4.5V, 10V
250mOhm @ 910mA, 10V
1V @ 250µA
5 nC @ 10 V
±20V
85 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 20V 4.1A SOT23
Infineon Technologies
108 670
In Stock
1 : 0,38000 €
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3 000 : 0,08187 €
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N-Channel
MOSFET (Metal Oxide)
20 V
4.1A (Ta)
2.5V, 4.5V
46mOhm @ 4.1A, 4.5V
1.1V @ 5µA
3.5 nC @ 4.5 V
±12V
290 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 20V 6.3A SOT23
Infineon Technologies
49 227
In Stock
1 : 0,38000 €
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3 000 : 0,08382 €
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N-Channel
MOSFET (Metal Oxide)
20 V
6.3A (Ta)
2.5V, 4.5V
21mOhm @ 6.3A, 4.5V
1.1V @ 10µA
8.9 nC @ 4.5 V
±12V
700 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET P-CH 20V 4.3A SOT23
Infineon Technologies
44 545
In Stock
1 : 0,38000 €
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3 000 : 0,08285 €
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P-Channel
MOSFET (Metal Oxide)
20 V
4.3A (Ta)
2.5V, 4.5V
54mOhm @ 4.3A, 4.5V
1.1V @ 10µA
6.9 nC @ 4.5 V
±12V
570 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 25V 5.8A SOT23
Infineon Technologies
34 060
In Stock
1 : 0,39000 €
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3 000 : 0,08562 €
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N-Channel
MOSFET (Metal Oxide)
25 V
5.8A (Ta)
4.5V, 10V
24mOhm @ 5.8A, 10V
2.35V @ 10µA
5.4 nC @ 10 V
±20V
430 pF @ 10 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 30V 3.4A SOT23
Infineon Technologies
85 519
In Stock
1 : 0,40000 €
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3 000 : 0,08658 €
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N-Channel
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
2.5V, 4.5V
63mOhm @ 3.4A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
270 pF @ 24 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET P-CH 30V 760MA SOT23
Infineon Technologies
135 648
In Stock
1 : 0,41000 €
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3 000 : 0,08823 €
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Active
P-Channel
MOSFET (Metal Oxide)
30 V
760mA (Ta)
4.5V, 10V
600mOhm @ 600mA, 10V
1V @ 250µA
5.1 nC @ 10 V
±20V
75 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 40V 3.6A SOT23
Infineon Technologies
84 552
In Stock
1 : 0,42000 €
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3 000 : 0,09315 €
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N-Channel
MOSFET (Metal Oxide)
40 V
3.6A (Ta)
4.5V, 10V
56mOhm @ 3.6A, 10V
2.5V @ 25µA
3.9 nC @ 4.5 V
±16V
266 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET P-CH 30V 3A MICRO3/SOT23
Infineon Technologies
64 766
In Stock
1 : 0,42000 €
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3 000 : 0,09247 €
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P-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
4.5V, 10V
98mOhm @ 3A, 10V
2.5V @ 250µA
14 nC @ 10 V
±20V
510 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 30V 5A MICRO3/SOT23
Infineon Technologies
35 907
In Stock
1 : 0,44000 €
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3 000 : 0,09774 €
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Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Ta)
2.5V, 4.5V
29mOhm @ 5A, 4.5V
1.1V @ 10µA
6.8 nC @ 4.5 V
±12V
650 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 30V 5.3A SOT23
Infineon Technologies
115 462
In Stock
1 : 0,46000 €
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3 000 : 0,10136 €
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N-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
27mOhm @ 5.2A, 10V
2.3V @ 25µA
2.6 nC @ 4.5 V
±20V
382 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET N-CH 60V 2.7A SOT23
Infineon Technologies
70 073
In Stock
1 : 0,53000 €
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3 000 : 0,11831 €
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N-Channel
MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
92mOhm @ 2.7A, 10V
2.5V @ 25µA
2.5 nC @ 4.5 V
±16V
290 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-6
MOSFET N-CH 30V 3.2A MICRO6
Infineon Technologies
7 220
In Stock
1 : 0,59000 €
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3 000 : 0,13697 €
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N-Channel
MOSFET (Metal Oxide)
30 V
3.2A (Ta)
4.5V, 10V
100mOhm @ 2.2A, 10V
1V @ 250µA
9.6 nC @ 10 V
±20V
210 pF @ 25 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro6™(TSOP-6)
SOT-23-6
6-PowerVDFN
MOSFET N-CH 20V 10A/12A 6PQFN
Infineon Technologies
63 312
In Stock
1 : 0,68000 €
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4 000 : 0,15424 €
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N-Channel
MOSFET (Metal Oxide)
20 V
10A (Ta), 12A (Tc)
2.5V, 4.5V
11.7mOhm @ 8.5A, 4.5V
1.1V @ 10µA
14 nC @ 4.5 V
±12V
1110 pF @ 10 V
-
1.98W (Ta), 9.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-PQFN (2x2) (DFN2020)
6-PowerVDFN
SOT223-3L
MOSFET N-CH 55V 2A SOT223
Infineon Technologies
41 562
In Stock
1 : 0,75000 €
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2 500 : 0,18199 €
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N-Channel
MOSFET (Metal Oxide)
55 V
2A (Ta)
4V, 10V
140mOhm @ 2A, 10V
2V @ 250µA
14 nC @ 10 V
±16V
230 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
MOSFET N-CH 30V 14A 8SO
Infineon Technologies
27 722
In Stock
1 : 0,82000 €
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4 000 : 0,18969 €
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N-Channel
MOSFET (Metal Oxide)
30 V
14A (Ta)
4.5V, 10V
8.7mOhm @ 14A, 10V
2.35V @ 25µA
12 nC @ 4.5 V
±20V
1020 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-252AA (DPAK)
MOSFET N-CH 30V 86A DPAK
Infineon Technologies
56 751
In Stock
1 : 0,82000 €
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2 000 : 0,20966 €
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N-Channel
MOSFET (Metal Oxide)
30 V
86A (Tc)
4.5V, 10V
5.8mOhm @ 25A, 10V
2.35V @ 50µA
23 nC @ 4.5 V
±20V
2150 pF @ 15 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT223-3L
MOSFET N-CH 55V 1.9A SOT223
Infineon Technologies
16 139
In Stock
1 : 0,84000 €
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2 500 : 0,20976 €
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N-Channel
MOSFET (Metal Oxide)
55 V
1.9A (Ta)
10V
160mOhm @ 1.9A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
190 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT223-3L
MOSFET N-CH 100V 1.6A SOT223
Infineon Technologies
9 750
In Stock
1 : 0,88000 €
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2 500 : 0,21812 €
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N-Channel
MOSFET (Metal Oxide)
100 V
1.6A (Ta)
10V
200mOhm @ 1.6A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
330 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
SOT223-3L
MOSFET N-CH 55V 3.1A SOT223
Infineon Technologies
60 290
In Stock
1 : 0,91000 €
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2 500 : 0,22904 €
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N-Channel
MOSFET (Metal Oxide)
55 V
3.1A (Ta)
4V, 10V
65mOhm @ 3.1A, 10V
2V @ 250µA
15.6 nC @ 5 V
±16V
510 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
TO-252AA (DPAK)
MOSFET N-CH 55V 17A DPAK
Infineon Technologies
56 994
In Stock
1 : 0,93000 €
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2 000 : 0,24001 €
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N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
4V, 10V
65mOhm @ 10A, 10V
2V @ 250µA
15 nC @ 5 V
±16V
480 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA (DPAK)
MOSFET N-CH 55V 28A DPAK
Infineon Technologies
21 111
In Stock
1 : 1,00000 €
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2 000 : 0,26391 €
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N-Channel
MOSFET (Metal Oxide)
55 V
28A (Tc)
4V, 10V
40mOhm @ 17A, 10V
2V @ 250µA
25 nC @ 5 V
±16V
880 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT223-3L
MOSFET N-CH 55V 3.8A SOT223
Infineon Technologies
58 208
In Stock
1 : 1,02000 €
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2 500 : 0,26025 €
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N-Channel
MOSFET (Metal Oxide)
55 V
3.8A (Ta)
4V, 10V
40mOhm @ 3.8A, 10V
2V @ 250µA
48 nC @ 10 V
±16V
870 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
MOSFET P-CH 30V 4.6A 8SO
Infineon Technologies
46 881
In Stock
1 : 1,07000 €
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4 000 : 0,26075 €
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P-Channel
MOSFET (Metal Oxide)
30 V
4.6A (Ta)
4.5V, 10V
70mOhm @ 4.6A, 10V
3V @ 250µA
40 nC @ 10 V
±20V
870 pF @ 10 V
-
2.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-252AA (DPAK)
MOSFET N-CH 200V 5A DPAK
Infineon Technologies
5 317
In Stock
1 : 1,12000 €
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2 000 : 0,29843 €
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N-Channel
MOSFET (Metal Oxide)
200 V
5A (Tc)
10V
600mOhm @ 2.9A, 10V
4V @ 250µA
23 nC @ 10 V
±20V
300 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3 074

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.