TO-247-3 Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRFP150NPBF MOSFET N-CH 100V 42A TO247AC Infineon Technologies	11 180 In Stock	1 : 2,69000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP260MPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	5 433 In Stock	1 : 3,06000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP3710PBF MOSFET N-CH 100V 57A TO247AC Infineon Technologies	3 108 In Stock	1 : 3,24000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	57A (Tc)	10V	25mOhm @ 28A, 10V	4V @ 250µA	190 nC @ 10 V	±20V	3000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP250NPBF MOSFET N-CH 200V 30A TO247AC Infineon Technologies	1 167 In Stock	1 : 3,24000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	30A (Tc)	10V	75mOhm @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	2159 pF @ 25 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP7530PBF MOSFET N-CH 60V 195A TO247 Infineon Technologies	6 036 In Stock	1 : 3,77000 € Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	6V, 10V	2mOhm @ 100A, 10V	3.7V @ 250µA	411 nC @ 10 V	±20V	13703 pF @ 25 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
STW75NF20 MOSFET N-CH 200V 75A TO247-3 STMicroelectronics	3 539 In Stock	1 : 4,21000 € Tube	STripFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	75A (Tc)	10V	34mOhm @ 37A, 10V	4V @ 250µA	84 nC @ 10 V	±20V	3260 pF @ 25 V	-	190W (Tc)	-50°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IRFP260NPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	1 176 In Stock	1 : 4,22000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SPW20N60C3FKSA1 MOSFET N-CH 650V 20.7A TO247-3 Infineon Technologies	1 811 In Stock	1 : 4,26000 € Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
SUG90090E-GE3 MOSFET N-CH 200V 100A TO247AC Vishay Siliconix	2 003 In Stock	1 : 4,57000 € Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	100A (Tc)	7.5V, 10V	9.5mOhm @ 20A, 10V	4V @ 250µA	129 nC @ 10 V	±20V	5220 pF @ 100 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IPW60R080P7XKSA1 MOSFET N-CH 600V 37A TO247-3 Infineon Technologies	2 872 In Stock	1 : 4,63000 € Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	80mOhm @ 11.8A, 10V	4V @ 590µA	51 nC @ 10 V	±20V	2180 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
MSC750SMA170B SICFET N-CH 1700V 7A TO247-3 Microchip Technology	475 In Stock	1 : 4,70000 € Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SPW17N80C3FKSA1 MOSFET N-CH 800V 17A TO247-3 Infineon Technologies	1 128 In Stock	1 : 4,76000 € Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	290mOhm @ 11A, 10V	3.9V @ 1mA	177 nC @ 10 V	±20V	2320 pF @ 25 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IRFP9240PBF MOSFET P-CH 200V 12A TO247-3 Vishay Siliconix	1 115 In Stock	1 : 4,83000 € Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	12A (Tc)	10V	500mOhm @ 7.2A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP450PBF MOSFET N-CH 500V 14A TO247-3 Vishay Siliconix	2 896 In Stock	1 : 4,96000 € Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Tc)	10V	400mOhm @ 8.4A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	2600 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP2907PBF MOSFET N-CH 75V 209A TO247AC Infineon Technologies	779 In Stock	1 : 5,16000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	209A (Tc)	10V	4.5mOhm @ 125A, 10V	4V @ 250µA	620 nC @ 10 V	±20V	13000 pF @ 25 V	-	470W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP90N20DPBF MOSFET N-CH 200V 94A TO247AC Infineon Technologies	813 In Stock	1 : 5,90000 € Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	23mOhm @ 56A, 10V	5V @ 250µA	270 nC @ 10 V	±30V	6040 pF @ 25 V	-	580W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
C3M0350120D SICFET N-CH 1200V 7.6A TO247-3 Wolfspeed, Inc.	1 090 In Stock	1 : 6,42000 € Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	7.6A (Tc)	15V	455mOhm @ 3.6A, 15V	3.6V @ 1mA	19 nC @ 15 V	+15V, -4V	345 pF @ 1000 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IPW60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-3-41 Infineon Technologies	1 803 In Stock	1 : 6,44000 € Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	45mOhm @ 22.5A, 10V	4V @ 1.08mA	90 nC @ 10 V	±20V	3891 pF @ 400 V	-	201W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IRFP460APBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	823 In Stock	1 : 6,47000 € Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	105 nC @ 10 V	±30V	3100 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
FDH45N50F-F133 MOSFET N-CH 500V 45A TO247-3 onsemi	2 684 In Stock	1 : 6,50000 € Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	45A (Tc)	10V	120mOhm @ 22.5A, 10V	5V @ 250µA	137 nC @ 10 V	±30V	6630 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IRF100P218AKMA1 MOSFET N-CH 100V 209A TO247AC Infineon Technologies	626 In Stock	1 : 6,51000 € Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	1.28mOhm @ 100A, 10V	3.8V @ 278µA	412 nC @ 10 V	±20V	24000 pF @ 50 V	-	3.8W (Ta), 556W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
TK39N60W5,S1VF MOSFET N-CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	875 In Stock	1 : 6,58000 € Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	74mOhm @ 19.4A, 10V	4.5V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
IPW65R080CFDAFKSA1 MOSFET N-CH 650V 43.3A TO247-3 Infineon Technologies	1 160 In Stock	1 : 7,01000 € Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	43.3A (Tc)	10V	80mOhm @ 17.6A, 10V	4.5V @ 1.76mA	161 nC @ 10 V	±20V	4440 pF @ 100 V	-	391W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3
STW56N60DM2 MOSFET N-CH 600V 50A TO247 STMicroelectronics	602 In Stock	1 : 7,20000 € Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	60mOhm @ 25A, 10V	5V @ 250µA	90 nC @ 10 V	±25V	4100 pF @ 100 V	-	360W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
FDH055N15A MOSFET N-CH 150V 158A TO247-3 onsemi	10 923 In Stock	1 : 7,42000 € Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	158A (Tc)	10V	5.9mOhm @ 120A, 10V	4V @ 250µA	92 nC @ 10 V	±20V	9445 pF @ 75 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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