IX4352NEAU 9 A Low-Side SiC MOSFET and IGBT Driver
Publish Date: 2025-09-22
The IXYS IX4352NEAU gate driver is specifically designed to drive SiC MOSFETs and high-power IGBTs with separate source and sink outputs.
Optimize SMPS Efficiency with a Multi-Technology Approach
Publish Date: 2025-09-17
Littelfuse SiC MOSFETs, MOS-gated thyristors, and rectifiers enable efficient, reliable SMPS designs for EV chargers, solar inverters, and motor drives.
IXYS/Littelfuse industrial-grade, single-switch SiC MOSFETs exhibit good power cycling characteristics and very fast, low-loss switching behavior.
IX3407B Single-Channel, Isolated IGBT Gate Driver
Publish Date: 2025-08-27
IXYS IX3407B galvanically isolated, single-channel gate drivers provide a typical 7 A peak source and sink output current on separate output pins.
IXYS/Littelfuse IXSJxxN120R1 high-efficiency 1200 V SiC MOSFETs offer exceptional performance in high-voltage, high-efficiency power conversion systems.
DFNAK3 Series High-Power TVS Diodes
Publish Date: 2025-07-01
The IXYS DFNAK3 series is a family of high-power TVS diodes designed for robust surge protection in AC and DC line applications.
LX5 Series 0.8 A Sensitive TRIACs
Publish Date: 2025-06-04
IXYS LX5 series 0.8 A sensitive TRIACs offer direct interface-to-microprocessor drivers in economical TO-92 and surface-mount packages.
IXYS D60xxS4ARP series automotive-grade silicon rectifiers in SOD-123FL packages have glass-passivated junctions, providing stable operation.
SK230 30 A Standard SCRs
Publish Date: 2025-05-19
IXYS SK230 30 A standard SCRs feature surge capability up to 290 A.
IXD2012N Gate Driver IC
Publish Date: 2025-05-06
IXYS/Littelfuse IXD2012N gate driver ICs are designed for efficient control of power transistors in various applications.
DCK Series SiC Schottky Barrier Diodes
Publish Date: 2025-04-14
IXYS, A Littelfuse Technology 650 V/1200 V silicon carbide (SiC) Schottky barrier diodes are ideal for applications requiring improved efficiency, reliability, and thermal management.
DPF100C1200HB Power Diode
Publish Date: 2024-11-15
The DPF100C1200HB power diode from IXYS features a fast-recovery epitaxial diode (FRED) structure that provides superior switching performance and efficiency.
LSIC2SD065D40CC: High-Performance SiC Schottky Diode
Publish Date: 2024-11-12
The IXYS LSIC2SD065D40CC is a state-of-the-art silicon carbide (SiC) Schottky barrier diode designed to deliver superior performance in high-power applications.
IXTN500N20X4/IXTN400N20X4 X4-Class Power MOSFET
Publish Date: 2024-10-30
IXYS IXTN500N20X4/IXTN400N20X4 are used in parallel to meet high current requirements due to the positive temperature coefficient of their on-state resistance.
IX4341/IX4342 MOSFET Gate Drivers
Publish Date: 2024-09-20
IXYS IX4341/IX4342 MOSFET gate drivers feature two independent drivers, either both with inverting capability or one inverting and one non-inverting.
QVxx12xHx Series Alternistor TRIACs
Publish Date: 2024-09-03
IXYS 12 A high-temperature alternistor TRIACs are rated +150°C max junction temperature and 153 A non-repetitive surge peak on-state current.
Pxxx0S3N Series SIDACtor® Protection Thyristor
Publish Date: 2024-07-30
IXYS' automotive-grade Pxxx0S3N-A SIDACtor series provides robust AC power line protection from overvoltage transients in hostile environments.
DSEP60-06AZ Fast Recovery Diode
Publish Date: 2024-07-22
Littelfuse/IXYS' DSEP60-06AZ fast recovery diodes are suitable for high-frequency applications due to low leakage current and short recovery time.
IXTY2P50PA Series PolarP™ P-Channel Power MOSFET
Publish Date: 2024-01-11
IXYS' IXTY2P50PA is an AEC-Q101-qualified and PPAP available, -500 V, -2 A, PolarP™ P-channel enhancement mode power MOSFET in TO-252 (DPAK) package.
IXTx60N20X4 Ultra Junction X4-Class Discrete Power MOSFETs
Publish Date: 2022-06-21
Littelfuse's IXTx60N20X4 Ultra Junction X4-class discrete power MOSFETs enable designers to achieve higher efficiency and increased power density.

