DSCxxA065LP 650 V SiC Schottky Diodes

Diodes Incorporated high-performance low figure of merit (FOM) 650 V SiC Schottky diodes are rated at 4 A, 6 A, 8 A, 10 A, and 12 A. The DSCxxA065LP series is packaged in the ultra-thermally efficient T-DFN8080-4 and is designed for high-efficiency power switching applications, such as DC-to-DC and AC-to-DC conversion, renewable energy, data centers [especially those that process heavy artificial intelligence (AI) workloads], and industrial motor drives.

These SiC Schottky diodes offer superior power switching performance compared to silicon alternatives. They have negligible switching losses due to the absence of reverse recovery current (I_RR) and their low capacitive charge (Q_C), making them suitable for high-speed switching circuits. Their low forward voltage (V_F) minimizes conduction losses, further increasing overall power efficiency. These combine to provide an exceptionally low FOM, expressed as: FOM = Q_C x V_F.

The compact and low-profile T-DFN8080-4 (typ. 8 mm x 8 mm x 1 mm) surface mount package incorporates a large underside heat pad, providing reduced thermal resistance. This benefits circuit designs increasing power density, reducing overall solution size, and lowering the cooling budget. The T-DFN8080-4 is an ideal alternative for TO252 (DPAK).