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FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFET

onsemi's FDMC86340 incorporates shielded gate technology

Image of Fairchild's FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFETThis N-channel MOSFET is produced using onsemi advanced Power Trench process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.

Features
  • Shielded gate MOSFET technology
  • Max RDS(ON) = 6.5 mΩ at VGS = 10 V, ID = 14 A
  • Max RDS(ON) = 8.5 mΩ at VGS = 8 V, ID = 12 A
  • High-performance technology for extremely-low RDS(ON)
  • Termination is lead-free
  • RoHS-compliant

80 V N-Channel MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPriceView Details
MOSFET N-CH 80V 14A/48A POWER33FDMC86340MOSFET N-CH 80V 14A/48A POWER3380 V14A (Ta), 48A (Tc)2428 - Immediate$2.37View Details
Published: 2013-09-17

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