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M3S 1200 V Silicon Carbide MOSFETs
onsemi’s EliteSiC MOSFETs have improved robustness to unexpected incoming voltage spikes or ringing
onsemi's family of 1200 V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. The family has optimum performance when driven with 18 V gate drive but also works well with 15 V gate drive.
Features
- TO247-4LD package for low common source inductance
- 15 V to 18 V gate drive
- M3S technology: 22 mΩ RDS(ON) with low EON and EOFF losses
- 100% avalanche tested
- Reduced EON losses
- 18 V for best performance; 15 V for compatibility with IGBT driver circuits
- Improved power density
- Improved robustness to unexpected incoming voltage spikes or ringing
Applications
- AC/DC conversion
- DC/AC conversion
- DC/DC conversion
- UPS
- Electric vehicle chargers
- Solar inverters
- Energy storage systems
M3S SiC MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | NTH4L022N120M3S | SIC MOS TO247-4L 22MOHM 1200V | 703 - Immediate 152550 - Factory Stock | $14.86 | View Details |
| | NVH4L022N120M3S | SIC MOS TO247-4L 22MOHM 1200V | 678 - Immediate 264150 - Factory Stock | $26.87 | View Details |
Published: 2021-10-25
Bulgaria