Name: AIMBG120R060M1XTMA1
Brand: Infineon Technologies
SKU: 448-AIMBG120R060M1XTMA1TR-ND
Price: 11.196 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMBG120R060M1XTMA1
cms-digikey-product-number	448-AIMBG120R060M1XTMA1TR-ND - Tape & Reel (TR) 448-AIMBG120R060M1XTMA1CT-ND - Cut Tape (CT) 448-AIMBG120R060M1XTMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	AIMBG120R060M1XTMA1
cms-description	SICFET N-CH 1200V 38A TO-263
Manufacturer Standard Lead Time	26 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 1200 V 38A (Tc) 202W (Tc) Surface Mount PG-TO263-7-12
cms-datasheet	cms-datasheet

Product Attributes

Type	cms-description	Select All
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	75mOhm @ 13A, 20V
Vgs(th) (Max) @ Id	5.1V @ 4.3mA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 20 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	AIMBG120