Name: IMT40R015M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMT40R015M2HXTMA1TR-ND
Price: 12.084 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMT40R015M2HXTMA1
DigiKey Part Number	448-IMT40R015M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMT40R015M2HXTMA1CT-ND - Cut Tape (CT) 448-IMT40R015M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMT40R015M2HXTMA1
Description	SIC-MOS
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 400 V 11.7A (Ta), 111A (Tc) 3.8W (Ta), 341W (Tc) Surface Mount PG-HSOF-8-2
Datasheet	Datasheet
EDA/CAD Models	IMT40R015M2HXTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	400 V
Current - Continuous Drain (Id) @ 25°C	11.7A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	19.1mOhm @ 27.1A, 18V
Vgs(th) (Max) @ Id	5.6V @ 9.7mA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2730 pF @ 200 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 341W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-2
Package / Case	8-PowerSFN