Name: IMYR140R029M2HXLSA1
Brand: Infineon Technologies
SKU: 448-IMYR140R029M2HXLSA1-ND
Price: 13.812 EUR
Availability: OutOfStock

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IMYR140R029M2HXLSA1
DigiKey Part Number	448-IMYR140R029M2HXLSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMYR140R029M2HXLSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1.4 kV 71A (Tc) 288W (Tc) Through Hole PG-TO247-4-18
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1.4 kV
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	29mOhm @ 27.3A, 18V
Vgs(th) (Max) @ Id	5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	1960 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	288W (Tc)
Operating Temperature	-55°C ~ 175°C
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4-18
Package / Case	TO-247-4