AIMZA75R016M1HXKSA1
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IMZA75R016M1HXKSA1

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448-IMZA75R016M1HXKSA1-ND
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Infineon Technologies
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IMZA75R016M1HXKSA1
cms-description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
23 Weeks
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cms-detailed-description
N-Channel 750 V 89A (Tj) 319W (Tc) Through Hole PG-TO247-4
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 cms-datasheet
Product Attributes
Type
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Mfr
Infineon Technologies
Series
CoolSiC™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
89A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
15mOhm @ 41.5A, 20V
Vgs(th) (Max) @ Id
5.6V @ 14.9mA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2869 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
319W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4
Package / Case
TO-247-4
Base Product Number
IMZA75R016
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In-Stock: 204
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Tube
cms-quantityUnit Pricecms-ext-price
116,26000 €16,26 €
3010,19167 €305,75 €
1209,40408 €1128,49 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:16,26000 €
Unit Price with VAT:19,51200 €