Name: NTTFS1D8N02P1E
Brand: onsemi
SKU: 488-NTTFS1D8N02P1ETR-ND
Price: 2.856 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTTFS1D8N02P1E
cms-digikey-product-number	488-NTTFS1D8N02P1ETR-ND - Tape & Reel (TR) 488-NTTFS1D8N02P1ECT-ND - Cut Tape (CT) 488-NTTFS1D8N02P1EDKR-ND - Digi-Reel®
cms-manufacturer	onsemi
cms-manufacturer-product-number	NTTFS1D8N02P1E
cms-description	MOSFET N-CH 25V 20A/152A 8PQFN
Manufacturer Standard Lead Time	24 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 25 V 20A (Ta), 152A (Tc) 800mW (Ta), 48W (Tc) Surface Mount 8-PQFN (3.3x3.3)
cms-datasheet	cms-datasheet

Product Attributes

Type	cms-description	Select All
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	3159 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (3.3x3.3)
Package / Case	8-PowerWDFN
Base Product Number	NTTFS1