N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
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SCTWA60N120G2-4

DigiKey Part Number
497-SCTWA60N120G2-4-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTWA60N120G2-4
Description
SILICON CARBIDE POWER MOSFET 120
Customer Reference
Detailed Description
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
SCTWA60N120G2-4 Models
Product Attributes
Type
Description
Select All
Category
Mfr
STMicroelectronics
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
388W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 221
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
115,13000 €15,13 €
1012,02900 €120,29 €
3011,12233 €333,67 €
12010,31267 €1237,52 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:15,13000 €
Unit Price with VAT:18,15600 €