Name: TPN11006NL,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPN11006NLLQTR-ND
Price: 1.584 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN11006NL,LQ
DigiKey Part Number	TPN11006NLLQTR-ND - Tape & Reel (TR) TPN11006NLLQCT-ND - Cut Tape (CT) TPN11006NLLQDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN11006NL,LQ
Description	MOSFET N-CH 60V 17A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN11006NL,LQ Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 200µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 30 V
Part Status Active	Power Dissipation (Max) 700mW (Ta), 30W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 17A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TPN11006
Rds On (Max) @ Id, Vgs 11.4mOhm @ 8.5A, 10V