Name: TPN1110ENH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN1110ENHL1QTR-ND
Price: 2.112 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN1110ENH,L1Q
DigiKey Part Number	TPN1110ENHL1QTR-ND - Tape & Reel (TR) TPN1110ENHL1QCT-ND - Cut Tape (CT) TPN1110ENHL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN1110ENH,L1Q
Description	MOSFET N-CH 200V 7.2A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
cms-datasheet	cms-datasheet
EDA/CAD Models	TPN1110ENH,L1Q Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN1110