No Bus Turnaround (NBT™) SRAMs

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            No Bus Turnaround (NBT™) SRAMs
                    GSI Technology’s NBT SRAMs are synchronous, burst-capable memories that are designed to use a data bus’s maximum bandwidth
    

Image of GSI Technology's No Bus Turnaround (NBT™) SRAMs GSI Technology’s NBT SRAMs have been the workhorses for midrange data acquisition designs for over 15 years and are available in a huge assortment of densities, packages, and design options. These SRAMs also come with a long-term memory IC support plan.

NBT SRAMs are synchronous, burst-capable memories with a simplified interface that are designed to use a data bus’s maximum bandwidth. NBT devices do not require turnaround cycles (idle clock cycles between a read and write operation).

NBT SRAMs are used in networking, industrial, automotive, and medical imaging applications where a mid-range performance point is required.

Features

NBT functionality allows zero wait read-write-read bus utilization
Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™, and ZBT™ SRAMs
2.5 V or 3.3 V ±10% core power supply
2.5 V or 3.3 V I/O supply
User-configurable pipeline and flow through mode
IEEE 1149.1 JTAG-compatible boundary scan
ZQ mode pin for user-selectable high/low output drive

LBO-pin for linear or interleave burst mode
Pin-compatible with 4 Mb, 9 Mb, 18 Mb, 36 Mb, and 72 Mb devices
Byte write operation (9-bit bytes)
Three chip enable signals for easy depth expansion
ZZ-pin for automatic power-down
RoHS compliant
119- and 165-bump BGA and 100-lead TQFP packages

Applications

Networking
Industrial

Automotive
Medical imaging