Name: IXFH18N100Q3
Brand: IXYS
SKU: IXFH18N100Q3-ND
Price: 20.88 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXFH18N100Q3
DigiKey Part Number	IXFH18N100Q3-ND
Manufacturer	IXYS
Manufacturer Product Number	IXFH18N100Q3
Description	MOSFET N-CH 1000V 18A TO247AD
Manufacturer Standard Lead Time	46 Weeks
Customer Reference
Detailed Description	N-Channel 1000 V 18A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	HiPerFET™, Q3 Class
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4890 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	830W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3
Base Product Number	IXFH18